| PART |
Description |
Maker |
| IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| LUCL9310GP-DT L9310 LUCL9310AP-D LUCL9310AP-DT LUC |
Line Interface and Line Access Circuit Full-Feature SLIC,Ringing Relay,and Test Access Device
|
AGERE[Agere Systems]
|
| EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
| WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module
Access time:200 ns; 512K x 8 CMOS EEPROM module
Access time:250 ns; 512K x 8 CMOS EEPROM module
Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| LUCL9310AP-D LUCL9310GP-D LUCL9310GP-DT |
Line Interface and Line Access Circuit Full-Feature SLIC,Ringing Relay,and Test Access Device
Top Entry Connector Hood; Enclosure Material:Aluminum Alloy; For Use With:C146 Rectangular Circular Connectors; Thread Size:PG 21; Connecting Termination:Screw; Gender:Male; No. of Contacts:16; Operating Voltage:400V; Series:C-146 RoHS Compliant: Yes
|
http://
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
| 5962-89518012X 5962-8951801RX 5962-89518012A |
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CQCC20
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP20
High Speed, µP-Compatible, CMOS, 8-Bit Sampling ADC; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military
|
ANALOG DEVICES INC
|
