| PART |
Description |
Maker |
| 218MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 6 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC207S806 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
Hittite Microwave Corporation
|
| 220MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC175MS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.7 - 4.5 GHz
|
Hittite Microwave Corporati...
Hittite Microwave Corporation
美国讯泰微波有限公司上海代表
|
| HMC218MS8E HMC218MS8-08 |
GaAs MMIC SMT DOUBLEBALANCED BALANCED MIXER, 4.5 - 6 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC220MS8 |
XCV50E-7FGG256C - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| 351S8E |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC351S806 HMC351S8 |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz
|
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC277MS806 |
GaAs MMIC SMT SINGLE GaAs MMIC SMT SINGLE
|
Hittite Microwave Corporation
|
| HMC251MS8 |
GaAs MMIC SMT DIVIDE-BY-2/ 3.0 - 6.5 GHz
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
HITTITE[Hittite Microwave Corporation]
|
