| PART |
Description |
Maker |
| UPD6708 UPD6708CX UPD6708GS |
IEBusa Inter Equipment Busa PROTOCOL CONTROL LSI
|
NEC[NEC]
|
| LC89602 |
Audio Decoder LSI for Mini-Disk Playback(?ㄤ?寰??纾????????棰?????LSI)
CMOS LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC8954 |
CMOS LSI
Error Correction and ADPCM Playback LSI for CD-1 Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MDR706F |
1.9GHz PHS Inter stage BPF
|
List of Unclassifed Manufacturers
|
| AS1115-BQFT AS1115-BSST AS111512 |
64 LEDs, IC Inter faced LED Dr iver wi th Keyscan
|
austriamicrosystems AG
|
| LC74725 LC74725M |
CMOS LSI
On-Screen Display Controller LSI
|
SANYO[Sanyo Semicon Device]
|
| GM2115 GM2125 |
ANALOG INTER FACE XGA/SXGA ONPANEL LCD PANEL CONTROLLER
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| GM2115 GM2125 |
ANALOG INTER FACE XGA/SXGA ONPANEL LCD PANEL CONTROLLER
|
Genesis Microchip
ETC[ETC]
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
