| PART |
Description |
Maker |
| MSM9555GS-2K MSM9554 MSM9554GS-2K MSM9555 |
LSI for FM Multiplex Data Demodulation(多路复用数据解调器的LSI) LSI的调频多路数据解调（多路复用数据解调器的大规模集成电路）
LSI Devices for FM Multiplex Data Demodulation
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| M52768FP |
PLL-INTER VIF/SIF
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MDR706F |
1.9GHz PHS Inter stage BPF
|
Electronic Theatre Controls, Inc.
etc
|
| LC895194 |
CMOS LSI
CD-ROM Error Correction LSI with On-Chip ATA-PI (IDE) Interface
|
SANYO[Sanyo Semicon Device]
|
| LC895195 |
CMOS LSI
ATA-PI (IDE) CD-ROM Decoder LSI
|
SANYO[Sanyo Semicon Device]
|
| AS1115-BQFT AS1115-BSST AS111512 |
64 LEDs, IC Inter faced LED Dr iver wi th Keyscan
|
austriamicrosystems AG
|
| LC89515K LC89515 |
CD-ROM/CD-I Error Correction/ Host Interface LSI CD-ROM/CD-I纠错/主机接口LSI
CMOS LSI
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| GS-29-010 |
FCI BergStak? Connector & TE Free Height* Connector Inter-Mating
|
FCI connector
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
