| PART |
Description |
Maker |
| HYS72D64300HU-5-C |
184-Pin Unbuffered Double Data Rate SDRAM
|
Qimonda
|
| PC3200R-30331-D HYS72D128320GBR-5-B HYS72D128320GB |
184 - Pin Registered Double Data Rate SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64301HBR-5-C HYS72D64301HBR-6-C HYS72D256320 |
184-Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS72D256520GR-7-A HYS72D256520GR |
184 Pin Registered Double Data Rate SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D128321GBR-5-B HYS72D128321GBR-6-B HYS72D2562 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS64D32301HU-5-B HYS64D64300GU-5-B HYS72D64300GU- |
42184-Pin Unbuffered Double-Data-Rate Memory Modules
|
Qimonda AG
|
| HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD116645D8J-D4 HYMD116645D8J-D43 HYMD116645D8J-J |
Unbuffered DDR SDRAM DIMM
16M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Hynix Semiconductor, Inc.
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
