| PART |
Description |
Maker |
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY |
128M(8Mx16) GDDR SDRAM
GDDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| IBM13N16644JCA-260T IBM13N16734JCA-260T IBM13N1664 |
x72 SDRAM Module
x64 SDRAM Module X64的内存模
16M x 64 One-Bank Unbuffered SDRAM Module(16M x 64 1组不带缓冲同步动态RAM模块6M x 64高速存储器阵列结构 1,600 × 64单银行无缓冲内存模组6x 64 1组不带缓冲同步动态内存模块（1,600 × 64高速存储器阵列结构））
|
DB Lectro, Inc.
International Business Machines, Corp.
|
| HY5DU643222AQ-4 HY5DU643222AQ-43 HY5DU643222AQ-5 H |
GDDR SDRAM - 64Mb
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU283222AF-22 HY5DU283222AF-28 HY5DU283222AF-33 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP
16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http://
Austin Semiconductor, Inc
Micross Components
|
| M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33 |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
