| PART |
Description |
Maker |
| KM23C4100DET KM23C4100DT |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
http://
|
| 29F4000 MX29F400TTC-12 MX29F400TTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| BM29F400B |
5-Volt Flash 256Kx16/512Kx8
|
Winbond Electronics
|
| BM29F400 BM29F400T |
5-Volt Flash 256Kx16/512Kx8
From old datasheet system
|
Winbond Electronics
|
| 29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
| HT27C4096 |
CMOS 256Kx16-Bit OTP EPROM
|
holtek
|
| MX29F004TTC-12 MX29F004TTC-12G MX29F004TTC-55 MX29 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| 29F004T-55 29F004T-70 29F004T-90 MX29F004TQC-12G M |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International Co., Ltd.
|
| N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
