PART |
Description |
Maker |
KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16)的CMOS掩模ROM分位512Kx8 / 256Kx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8)的CMOS掩模ROM分位512Kx8)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016 |
256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC 4 Mbit (512 K x 8-Bit) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices] AMD Inc
|
MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
HT23C040H 23C040H |
CMOS 512KX8-Bit High Speed Mask ROM From old datasheet system
|
holtek
|
MX23L4003 23L4003 |
4M-BIT [512Kx8] LOW VOLTAGE OPERATION CMOS MASK ROM From old datasheet system
|
Macronix 旺宏
|