| PART |
Description |
Maker |
| DS1330BL-70-IND DS1330BL-100-IND DS1330YL-100 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1235AB-200 DS1235Y-120 DS1235AB-150 DS1235Y-200 |
NVRAM (Battery Based) NVRAM中（基于电池
|
TE Connectivity, Ltd.
|
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| M40Z30005 M40Z300MH6TR M40Z300MQ6TR M40Z300WMH6TR |
NVRAM CONTROLLER FOR UP TO EIGHT LPSRAM
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs 5VV NVRAM中监多达8LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MR44V064A |
64k(8,192-Word ?8-Bit) FeRAM (Ferroelectric Random Access Memory)
|
LAPIS Semiconductor Co....
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
| M40SZ100Y07 M4Z28-BR00SH M40SZ100W M40SZ100Y |
5V or 3V NVRAM supervisor for LPSRAM
|
http://
STMicroelectronics
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
