| PART |
Description |
Maker |
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| KVR133X64C2256 KVR133X64C2_256 KVR133X64C2/256 |
256MB 32M x Bit PC133 CL3 Low Profile 168-Pin Dimm
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| V437464C24V |
3.3 VOLT 64M x 72 HIGH PERFORMANCE PC133 REGISTERED PLL ECC SDRAM MODULE
|
Mosel Vitelic, Corp
|
| KVR133X64C3256 KVR133X64C3_256 KVR133X64C3/256 |
256MB 32M x 64Bit PC133 CL3 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512 MB的无缓冲内存的SODIMM 64 Mword4位，133/100 MHz内存总线银模块（162米部分）PC133/100 SDRAM内存
x64 SDRAM Module
|
Elpida Memory, Inc.
|
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
