| PART |
Description |
Maker |
| EDI7F341MV EDI7F341MV150BNC EDI7F2341MV120BNC |
1 Meg x 32 Flash Module(1Megx32闪速存储器模块(存取时间12050ns
EEPROM
|
White Electronic Designs Corporation
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT16D232X |
1 Meg / 2 Meg x 32 DRAM Module
|
Micron Technology
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MT4C4003J |
1 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| MT4C40005 MT4C40004 |
4 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| AS4LC4M16DG-6S_XT AS4LC4M16 AS4LC4M16DG-5S_IT AS4L |
4 MEG x 16 DRAM
|
AUSTIN[Austin Semiconductor]
|
| MT8LSDT864A MT8LSDT864AG-10B MT8LSDT864AG-10C MT8L |
8,16 MEG x 64 SDRAM DIMMs
|
MICRON[Micron Technology]
|
| MT5LC128K8D4S13A MT5LC64K16D4S13A |
S13A 1 MEG SRAM DIE
|
Micron Technology, Inc.
|
