| PART |
Description |
Maker |
| CTA2P1N2 CTA2P1N-7-F |
COMPLEX TRANSISTOR ARRAY
|
Diodes Incorporated
|
| CTA2N1P2 |
COMPLEX TRANSISTOR ARRAY
|
Diodes Incorporated
|
| CTA2N1P-7-F |
COMPLEX TRANSISTOR ARRAY 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| DRDNB21D-7 |
COMPLEX ARRAY FOR DUAL RELAY DRIVER 100 mA, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| FMS7G20US60 |
600V, 20A IGBT Module (Compact & Complex Type)
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| IMZ4 A5800398 |
Transistors > Complex Bipolar Transistors
General purpose transistor (dual transistors)
From old datasheet system
|
Rohm CO.,LTD.
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
|
