| PART |
Description |
Maker |
| RO2053 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| PAK-I |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| PAK-II |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| TC0268A |
SAW Resonator 310 MHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| CNX310056E4108 |
CNX 310 XXX CABLE ASSEMBLY
|
Visual Communications Company
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| 2N7002E11 2N7002ET1G 2N7002ET3G |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23
Small Signal MOSFET 60 V, 310 mA, TRENCH, N-Channel 260 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Small Signal MOSFET
|
ON Semiconductor
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
