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TC55VD1636FF-133 - 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)

TC55VD1636FF-133_1805760.PDF Datasheet


 Full text search : 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
 Product Description search : 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)


 Related Part Number
PART Description Maker
TC55VD1636FF-133 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
Toshiba Corporation
TC55V16366FF-133 512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
Toshiba Corporation
M6MGT331S8BKT M6MGB331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation
M6MGB331S8AKT M6MGT331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation.
GX60N60C2D1 Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
IXYS CORP
MK32VT1632-10YC 16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
OKI SEMICONDUCTOR CO., LTD.
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
MR27V852E MR27V852ERA MR27V852EJA 524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
OKI[OKI electronic componets]
MR27V6466FTA MR27V6466F From old datasheet system
4,194,304-Word x 16Bit or 2,097,152-Word x 32-Bit Synchronous One Time PROM
OKI[OKI electronic componets]
M6MGT331S4BKT M6MGB331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
Renesas Electronics Corporation
 
 Related keyword From Full Text Search System
TC55VD1636FF-133 Microelectronic TC55VD1636FF-133 circuit TC55VD1636FF-133 crystal TC55VD1636FF-133 microcontroller TC55VD1636FF-133 microcontroller
TC55VD1636FF-133 siliconix TC55VD1636FF-133 mosfet TC55VD1636FF-133 siliconix TC55VD1636FF-133 Sipat TC55VD1636FF-133 Switch
 

 

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