| PART |
Description |
Maker |
| DS1345YL-70 DS1345YL-70-IND DS1345BL-70 DS1345BL-7 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Cypress Semiconductor, Corp.
|
| DS1646L-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1235AB-200 DS1235Y-120 DS1235AB-150 DS1235Y-200 |
NVRAM (Battery Based) NVRAM中（基于电池
|
TE Connectivity, Ltd.
|
| UDS-3611H UDS-3612H UDS-3613H UDS-3614H UDN-3612M |
3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor
5.0 or 3.0V, 512 Bit (64 Bit x8) Serial RTC (SPI) SRAM and NVRAM Supervisor
Serial real-time clock
25 A standard and Snubberless" triacs
25 A standard and Snubberless" triacs 双外围驱动器
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 双外围驱动器
|
Motorola Mobility Holdings, Inc.
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| GN01081B |
GaAs IC with built-in ferroelectric RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Black Box, Corp.
Panasonic Semiconductor
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40SZ100Y07 M4Z28-BR00SH M40SZ100W M40SZ100Y |
5V or 3V NVRAM supervisor for LPSRAM
|
http://
STMicroelectronics
|
| M40SZ100W M40SZ100Y |
NVRAM SUPERVISOR FOR LPSRAM
|
ST Microelectronics
|
