PART |
Description |
Maker |
EDI8L24129V10BC EDI8L24129V10BI EDI8L24129V12BI ED |
128Kx24 SRAM 3.3 Volt
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White Electronic Design...
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HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28 x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
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HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
M48T08 M48T0807 M48T08Y M48T18 |
64Kb (8K x 8) TIMEKEEPER SRAM(64KTIMEKEEPER SRAM) 64Kb的(8K的8)计时器的SRAM4K的位计时器的SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER? SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER庐 SRAM
|
STMicroelectronics N.V. 意法半导
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AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
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Alliance Semiconductor Corp... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc.
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AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
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White Electronic Designs Corporation
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WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns 128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns)) 128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 128K X 8 STANDARD SRAM, 20 ns, CDFP32
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White Electronic Designs Corporation White Electronic Designs, Corp.
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