| PART |
Description |
Maker |
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC55257DFI TC55257DFTI TC55257DPI-70V TC55257DPI-8 |
(TC55257xxx) STATIC RAM
32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM）的
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CAT5114SI-00TE13 CAT5114U-10TE13 CAT5114U-00TE13 C |
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC
128K x 8 Static RAM
512K x 24 Static RAM 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
|
Analog Devices, Inc.
|
| IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| TC55257DFI-70L TC55257DFI-85L TC55257DFTI-70L TC55 |
32,768 WORD x 8 BIT STATIC RAM 32,768字8位静态RAM
32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM）的
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U I |
70ns; 5V; 32K x 8 low power CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
45ns; 5V; 32K x 8 low power CMOS static RAM
|
Integrated Circuit Solution...
ICSI[Integrated Circuit Solution Inc]
|
| M24L16161ZA-70BIG |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Elite Semiconductor Memory Technology, Inc.
Elite Semiconductor Memory Technology Inc.
|
