| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BD944 |
(BD944 - BD948) Silicon Epitaxial Base Power Transistors
|
Magna
|
| BDS12 BDS12SMD BDS10SMD BDS11SMD BDS11 BDS10 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
List of Unclassifed Manufacturers
ETC
Comset Semiconductors
|
| 2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| BD242 BD242B BD242A |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
| 2SA814 |
(2SA814 / 2SA815) SILICON PNP EPITAXIAL BASE MESA TYPE
|
Toshiba Semiconductor
|
| BDX1812 BDX18N |
PNP SILICON TRANSISTOR EPITAXIAL BASE
PNP SILICON TRANSISTOR EPITAXIAL BASE
|
Comset Semiconductor
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
