| PART |
Description |
Maker |
| 110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
800V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE
CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式
3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HGTG34N100E2 |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
| 34A-020 34A-050 34A-040 34A-030 |
(34A-xxx) Digital Delay Modules
|
Newport Components
|
| SBYV26C SBYV26D SBYV26F SBYV26G SBYV26A SBYV26B SB |
Ultra Fast Recovery Pack: GF1
SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE拢潞 200 to 1400V CURRENT: 1.0A
SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE 200 to 1400V CURRENT: 1.0A
|
Gulf Semiconductor
|
| 6MBI35S-140 |
1400V / 35A 6 in one-package
|
Fuji Electric
|
| IXGT20N140C3H1 IXGH20N140C3H1 |
GenX3 1400V IGBTs w/ Diode
|
IXYS Corporation
|
| FGA20S140P |
1400V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| MIMMD250F140X |
1400V 250A Rectifier Module RoHS Compliant
|
Micross Components
|
| 6MBI100S-14001 |
IGBT MODULE ( S series) 1400V / 100A 6 in one-package
|
Fuji Electric
|
| CM300DY-28H |
IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NTTFS4945NTAG |
Power MOSFET 30V 34A 9 mOhm Single N-Channel u8FL 7100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
