| PART |
Description |
Maker |
| PIC18F4520TI_SO PIC18F2420TE_PSTQP PIC18F2420TE/PS |
MOSFET N-CH 70V 76A TO-247AD 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技10
CABLE ASSEMBLY; MHV MALE TO SHV PLUG ; 93 OHM, RG62A/U COAX; 12" CABLE LENGTH 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
MOSFET N-CH 800V 27A TO-264AA
MOSFET N-CH 200V 58A TO-247AD
MOSFET N-CH 200V 120A TO-264AA
ADAPTER BNC R/A FEMALE-MALE
Din Rail; External Width:7.5mm; Length:2m; Body Material:Steel
MOSFET N-CH 70V 110A TO-264AA
MOSFET N-CH 900V 6A TO-247AD
MOSFET N-CH 600V 48A TO-264
MOSFET N-CH 500V 48A TO-264AA
MOSFET N-CH 600V 44A TO-264AA
MOSFET N-CH 100V 180A TO-264AA
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| IXTK75N30 |
75 A, 300 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS CORP
|
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| APL502B2 APL502L APL502LG |
LINEAR MOSFET
Power MOSFET; Package: TO-264 [L]; ID (A): 58; RDS(on) (Ohms): 0.09; BVDSS (V): 500; 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
Microsemi, Corp.
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| SSE90N08-08 |
90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRFS30N20D |
200V,30A SMPS MOSFET for High frequency DC-DC converters(200V,30A开关电MOSFET用于高频DC-DC变换
|
International Rectifier
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
|
