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MBM29F040A-90 - 4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)

MBM29F040A-90_1747299.PDF Datasheet
 Full text search : 4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)
 Product Description search : 4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)

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MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
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IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
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Fujitsu Limited
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MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
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MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F x8 Flash EEPROM
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AM29F400BB-60FC AM29F400BB-60FE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 5V PROM, 60 ns, PDSO48
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AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
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AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
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