| PART |
Description |
Maker |
| CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| TP2640ND |
P-Channel Enhancement-Mode Vertical DMOS FETs 400 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| VP0345N1 VP0345N2 VP0345ND VP0345N5 VP0350N2 |
1.5 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
400 mA, 450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET DIE-3
1 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
400 mA, 500 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc.
SUPERTEX INC
|
| SML40H28 SML40H28R1 |
28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| RJK4013DPE09 RJK4013DPE-00-J3 RJK4013DPE-09 |
Silicon N Channel MOS FET High Speed Power Switching
17 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
|
Renesas Electronics Corporation
Renesas Electronics, Corp.
|
| AM55-0024RTR AM55-0024TR |
100-400 MHz, Hi dyn range 2 channel IF amplifier with power control
Hi Dyn Range 2 Channel IF Amp with Power Control, 100 - 400 MHz
Hi Dyn Range 2 Channel IF Amp with Power Control/ 100 - 400 MHz
|
MA-Com
Tyco Electronics
|
| M57788LR 57788LR |
400-430MHz, 13.5V, 47W, FM MOBILE RADIO 400 - 430MHz3.5V7W配合，调频移动通信
400-430MHz / 13.5V / 47W / FM MOBILE RADIO
From old datasheet system
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 47W, FM MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IXGN400N60A3 |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
|
IXYS, Corp.
|
| PHX5N40 |
5.3 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
|
