| PART |
Description |
Maker |
| M36L0T7050B2 M36L0T7050T2 |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM
|
Numonyx
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| S25FL127S |
128 Mbit (16 Mbyte) MirrorBit Flash Non-Volatile Memory
|
SPANSION
|
| M29W128GH M29W128GH60N6E M29W128GH60N6F M29W128GH6 |
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
|
Numonyx B.V
|
| M58WR128ET M58WR128EB |
128 MBIT (8MB X 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M58WR128EB80ZB6T M58WR128E-ZBT M58WR128ETZB M58WR1 |
Connector 连接
128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M29DW128G60NF6E M29DW128G60NF6F M29DW128G60ZA6E M2 |
128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
|
Numonyx B.V
|
| M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体264兆移动存储芯片，1.8V电源多芯片封
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体24兆移动存储芯片，1.8V电源多芯片封
|
意法半导
STMicroelectronics N.V.
|
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