| PART |
Description |
Maker |
| 2MBI300VN-170-50 |
IGBT MODULE (V series) 1700V / 300A / 2 in one package
|
Fuji Electric
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
| CM400DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| SY88403BLEYTR SY88403BLMG SY88403BLMGTR SY88403BLE |
3.3V 4.25Gbps CML Low-Power Limiting Post Amplifier with TTL LOS
|
MICREL[Micrel Semiconductor]
|
| SY88853V SY88773V SY88773VMG |
3.3V/5V 3.2Gbps CML LOW-POWER LIMITING POST AMPLIFIER WITH TTL LOS
|
Micrel Semiconductor
|
| SY84113BUMG SY84113BUMGTR |
Low Power 2.5V 1.25Gbps Limiting Post Amplifier with Ultra Wide LOS Range
|
Micrel Semiconductor
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| SK30GH12306 SK30GH123 |
IGBT Module IGBT模块
IGBT Module 33 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http://
IXYS[IXYS Corporation]
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
