| PART |
Description |
Maker |
| MP86884DQKT |
Intelli-PhaseTM Solution (Integrated HS/LS FETs and Driver) in 6x6mm TQFN
|
Monolithic Power System...
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CY7C1041BNV33L-15VXC CY7C1041BNV33-15VXC CY7C1041B |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 Static RAM 256K × 16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49 |
LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| 29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
| CY62146EV30LL-45BVXI CY62146EV30LL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1006D-10VXI |
1-Mbit (256K x 4) Static RAM 256K X 4 STANDARD SRAM, 10 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| CY7C1041D-12ZSXE |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
