| PART |
Description |
Maker |
| K7P801811B-HC27 K7P801811B-HC30 K7P801811B-HC25 K7 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A801809A K7A803609A |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V889 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A803600A-16 K7A801800A K7A801800A-10 K7A801800A- |
512Kx18-Bit Synchronous Burst SRAM Data Sheet
256Kx36Bit Synchronous Burst SRAM Data Sheet
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| KM736V849 |
256Kx36-Bit No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
