| PART |
Description |
Maker |
| HYB18T512400AF-3 HYB18T512400AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB18TC256160AF1 HYB18TC256160AF-3S |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| HYMP564U72P8-E3_C4 HYMP512U648 HYMP512U648-E3 HYMP |
240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.
|
HYNIX[Hynix Semiconductor]
|
| IS46DR16320B-3DBLA2 IS46DR16320B-3DBLA1 IS46DR1632 |
512Mb (x8, x16) DDR2 SDRAM
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
Integrated Silicon Solu...
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| IS43R16320A |
32Meg x 16 512-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc.
|
| HYI25DC512800CE-5 HYI25DC512800CE-6 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
| HYB18T512160AF-5 HYB18T512400AF HYB18T512400AF-3 H |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYI25DC512800CE HYI25DC512160CE HYI25DC512160CE-5 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
