| PART |
Description |
Maker |
| TGS2306 |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor
|
| PE6038 |
SMA FEMALE HIGH POWER TERMINATION FREQUENCY RANGE: DC TO 18GHz
|
Pasternack Enterprises, Inc.
|
| TGS4301-EPU |
SPDT VPIN
High Power Ka-Band Absorptive SPDT Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| R411806121 R411803121 |
ATTENUATOR, SMA 2W 6DB 18GHZATTENUATOR, SMA 2W 6DB 18GHZ; Impedance:50R; Attenuation:6dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
ATTENUATOR, SMA 2W 3DB 18GHZATTENUATOR, SMA 2W 3DB 18GHZ; Impedance:50R; Attenuation:3dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W
|
Radiall S.A.
RADIALL S A
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PDW06089 |
6-18GHz 4-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| ITTS501AJ |
SPDT High Power T/R Switch
|
M/A-COM / Tyco Electronics
|
