| PART |
Description |
Maker |
| C30665 C30619 C30641 C30642 C30619E C30619E-TC C30 |
Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler.
Large-Area InGaAs Photodiodes
Large-area InGaAs photodiode. TO-18 low profile with silicon window.
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler.
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
|
| S3590-18 |
Si PIN photodiode Large area Si PIN photodiode for scintillation counting 硅PIN光电二极管的闪烁计数大面积硅PIN光电二极
|
Hamamatsu Photonics K.K.
|
| S3590-18 |
Si PIN photodiode Large area Si PIN photodiode for scintillation counting
|
Hamamatsu Corporation
|
| SD036-70-62-531 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| S3590-08 S3590-09 |
Si PIN photodiode Large area sensors for scintillation detection
|
Hamamatsu Corporation
|
| SD197-70-74-591 |
Cooled Large Area Blue Silicon Avalanche Photodiode
|
List of Unclassifed Manufacturers
ETC
|
| SD394-70-72-591 |
Cooled Large Area Red Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| S1723-05 S1722-02 |
Si PIN photodiode Large area, high-speed PIN photodiodes for UV to near IR photometry
|
Hamamatsu Photonics
|
| FD1500W |
Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm
|
List of Unclassifed Manufacturers
|
