| PART |
Description |
Maker |
| 8800NMM1-06 8800NFM3-12 8800NMM2-02 8800NMM3-06 |
10 MHz - 6000 MHz RF/MICROWAVE MONITOR TEE DC BLOCK, 1.25 dB INSERTION LOSS-MAX
10 MHz - 12000 MHz RF/MICROWAVE MONITOR TEE DC BLOCK, 3 dB INSERTION LOSS-MAX
10 MHz - 2500 MHz RF/MICROWAVE MONITOR TEE DC BLOCK, 1 dB INSERTION LOSS-MAX
|
|
| MA4E2513L-1289W MA4E2513 MA4E2513-1289 MA4E2513L-1 |
SURMOUNT Low Barrier Tee ?301 Footprint Silicon Schottky Diodes
SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| 1709-3 |
ADAPTER, SHV, TEE (M-F-M)
|
Winchester Electronics ...
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| MA4E2514M-1116 MA4E2514M-1116T MA4E2514M-1116W MAD |
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| PE1605 |
400 MHz to 10 GHz SMA Bias Tee Rated To 200 mA And 50 Volts DC
|
Pasternack Enterprises,...
|
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| RM-1318-H RM-1318-L RM-1318-M |
Reduced-miniature Reed Switch
|
Reed Relays and Electronics
|
| IPL65R420E6 |
Reduced board space consumption
|
Infineon Technologies A...
|
