| PART |
Description |
Maker |
| W25Q80 W25Q16 W25Q32 |
8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5 |
32M x 8 Bit 16M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| HYS72V32200GU HYS64V32200GU HYS72V64220GU HYS64V64 |
3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:15ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
|
Siemens Semiconductor G...
DRAM
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
|
SIEMENS AG
|
| MBM29LV160B-12PCV MBM29LV160T-12PCV MBM29LV160T-80 |
16M (2M x??8/1M x 16) BIT
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO46
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
D10 - CONNECTOR ACCESSORY
16M (2M x′ 8/1M x 16) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| UPD23C16300GZ-XXX-MJH UPD23C16300F9-XXX-BC3 |
16M-bit (2M-wordx8-bit/1M-wordx16-bit) Mask ROM
|
NEC
|
| UPD23C16040BLGY-XXX-MJH UPD23C16080BLGY-XXX-MJH UP |
16M-bit (2M-wordx8-bit/1M-wordx16-bit) Mask ROM
|
NEC
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
