| PART |
Description |
Maker |
| CDM-62256C CDM-62256C3 |
High Reliability CMOS 32768 x 8-Bit LSI Static RAM
|
Harris Semiconductor
|
| CDP1822C CDP1822C3 FN2981 |
From old datasheet system
High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM
|
INTERSIL[Intersil Corporation]
|
| IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM
Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Advanced Interconnections, Corp.
SIEMENS AG
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
Integrated Circuit Solu...
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| STK22C48 STK22C48N25 STK22C48N35 STK22C48N35I STK2 |
2K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
2K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
2K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
2K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC551402J TC551402J-22 TC551402J-25 |
(TC551402J-22/-25) CMOS STATIC RAM
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
|
G-LINK Technology
|
