| PART |
Description |
Maker |
| WS512K32-45 WS512K32-20 WS512K32-25 WS512K32-17 WS |
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时7ns
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????5ns锛?
|
White Electronic Designs Corporation
|
| WS512K32N-35H1CA WS512K32N-35H1MA WS512K32N-35H1IA |
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
|
Analog Devices, Inc.
|
| WED2DL32512V38BC WED2DL32512V40BI WED2DL32512V40BC |
512Kx32 Synchronous Pipeline Burst SRAM
|
WEDC[White Electronic Designs Corporation]
|
| EDI7F433512V100BNC EDI7F433512V120BNC EDI7F433512V |
512Kx32 FLASH
|
White Electronic Designs Corporation
|
| WF512K32N-90G2LM5A WF512K32N-90H1I5A |
512Kx32 5V FLASH MODULE, SMD 5962-94612
|
White Electronic Design...
White Electronic Designs Corporation
|
| WF512K32N-60H1Q5 WF512K32N-90H1Q5 WF512K32N-90H1Q5 |
512Kx32 5V FLASH MODULE, SMD 5962-94612
|
WEDC[White Electronic Designs Corporation]
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
| P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32
16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52
128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32
64K X 1 STANDARD SRAM, 10 ns, PDIP22
1K X 4 STANDARD SRAM, 10 ns, PDIP18
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp.
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
PYRAMID SEMICONDUCTOR CORP
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
