| PART |
Description |
Maker |
| UPD41416 UPD41416-12 UPD41416-15 UPD41416-20 |
16,384 X 4-BIT DYNAMIC NMOS RAM
|
NEC
|
| S6831B |
16384 Bit Static NMOS ROM
|
AMI Semiconductor
|
| UPD41256 |
262144 Dynamic NMOS RAM
|
NEC Electronics
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http://
SIEMENS AG
|
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK）（4分字× 32位同步动态内存模块）
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
