| PART |
Description |
Maker |
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory
Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology
Numonyx B.V
|
| PC28F128G18XX |
StrataFlash Embedded Memory
|
Micron
|
| JS28F640P30T85 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
| RC28F256 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
| 28F640P3 PF48F3P0ZB00 PF48F2P0ZB00 PC48F0P0VB00 PC |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:5m; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
Intel StrataFlash Embedded Memory 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Intel StrataFlash Embedded Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
COAXIAL CABLE; COAXIAL RG/U TYPE:11; IMPEDANCE 75OHM CONDUCTOR SIZE AWG:14; NO. STRANDS X STRAND SIZE: SOLID; JACKET MATERIAL:POLYVINYLCHLORIDE (PVC); CONDUCTOR MATERIAL:STEEL; CONDUCTOR PLATING COPPER; JACKET COLOR:BLAC 英特尔StrataFlash嵌入式存储器
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
Intel StrataFlash Embedded Memory 英特尔StrataFlash嵌入式存储器
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 英特尔StrataFlash嵌入式存储器
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle 英特尔StrataFlash嵌入式存储器
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A 英特尔StrataFlash嵌入式存储器
Strata Flash Memory / 1 Gbit P30 Family
CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41
Intel StrataFlash Embedded Memory
|
Intel Corp.
http://
Intel, Corp.
Intel Corporation
|
| PF38F5070MXXXX |
StrataFlash Cellular Memory
|
Numonyx
|
| PF48F4400M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| GE28F128K18 GE28F128K3 GE28F256K3 |
(GE28FxxxKx) Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| 28F320S3 29060805 |
5 Volt Intel StrataFlash Memory
From old datasheet system
|
Intel
|
| PC28F256G18AF PC28F256G18AE PC28F128G18FF PC28F00A |
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
|
Micron Technology
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
