| PART |
Description |
Maker |
| WED9LC6416V2010BI WED9LC6416V2010BC WED9LC6416V201 |
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32??????RAM??Mx32????ㄦ?RAM?靛?)
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAM4Mx32同步动态RAM阵列) 128Kx32 SSRAM/4Mx32内存阵列28Kx32同步静态内存和4Mx32同步动态内存阵列）
128Kx32 SSRAM/4Mx32 SDRAM 128Kx32 SSRAM/4Mx32内存
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAMB>4Mx32同步动态RAM阵列)
|
White Electronic Designs Corporation
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| KM732V787 |
128Kx32 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| WSF41632-22H2C WSF41632-22H2M WSF41632-22H2MA WSF4 |
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
|
White Electronic Designs Co...
|
| KM732V789 |
128Kx32-Bit Synchronous Pipelined Burst SRAM(128Kx32位同步流水线脉冲 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WF128K32N-150G2LC5A |
128KX32 5V FLASH MODULE, SMD 5962-94716 128KX32 5V的闪存盘，贴962-94716
|
Glenair, Inc.
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EDI9LC644V EDI9LC644V1310BC EDI9LC644V1312BC EDI9L |
128Kx32 SSRAM/1Mx32 SDRAM
|
White Electronic Designs Corporation
|
| EDI8L32128C20AC EDI8L32128C |
128Kx32 CMOS High Speed Static RAM 128Kx32的CMOS高速静态随机存储器
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
