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DN3125 - N-Channel Depletion-Mode Vertical DMOS FET(击穿电压250V,N沟道耗尽型垂直DMOS场效应管)

DN3125_1444372.PDF Datasheet


 Full text search : N-Channel Depletion-Mode Vertical DMOS FET(击穿电压250V,N沟道耗尽型垂直DMOS场效应管)
 Product Description search : N-Channel Depletion-Mode Vertical DMOS FET(击穿电压250V,N沟道耗尽型垂直DMOS场效应管)


 Related Part Number
PART Description Maker
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
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BF994SA BF994SB BF994S BF994 From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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CAP CER 47PF 50V 5% C0G 0603
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
BF995B BF995A BF995 ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
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