| PART |
Description |
Maker |
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| PD45128163 PD45128163G5-A10-9JF PD45128163G5-A75-9 |
128M-bit Synchronous DRAM 4-bank, LVTTL
128M-bit Synchronous DRAM 4-bank LVTTL
|
ELPIDA[Elpida Memory]
|
| PD45128163G5-A75SU-9JF PD45128163G5-A80SU-9JF PD45 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| M2V28S40TP-8L M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| HY57V28162 HY57V281620HCT HY57V281620HCLT |
8Mx16|3.3V|4K|6|SDR SDRAM - 128M
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M12S64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
