| PART |
Description |
Maker |
| MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
POT 2.0K OHM 1/4 SQ CERM SL MT
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited.
Fujitsu Limited
Fujitsu, Ltd.
|
| MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB84VD22194FM MB84VD22194FM-70PBS MB84VD22184FM-70 |
32M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM
|
SPANSION[SPANSION]
|
| MB84VD22290FA-70PBS MB84VD22280FA-70 MB84VD22280FA |
32M (X16) FLASH MEMORY & 8M (X16) STATIC RAM
|
SPANSION[SPANSION]
|
| LH28F320BFHE-PTTLZ1 |
32M (x16) Flash Memory
|
Sharp Electrionic Components
|
| LH28F320BFHG-PBTLZL |
32M (x16) Flash Memory
|
Sharp Electrionic Components
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- |
16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| SST39VF3201-90-4I-EK SST39VF6401-90-4I-EK SST39VF1 |
10-Element Bar Graph Array
CAT5E PATCH CORD 100MHZ 4 FOOT WHITE
CAT5E PATCH CORD 30 FOOT BLACK
CAT5E PATCH CORD 100MHZ 1 FOOT WHITE
QF50 SRf DIN 41651 Std LoPro 34Ckt
CAT5E PATCH CORD 50 FOOT BLACK
LED Light Bars
CAT5E PATCH CORD 100MHZ 3 FOOT WHITE
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
SCOPEMETER 200MHz, 2.5GS/s,B/W with SCC kit, Z540 CALIBRATION RoHS Compliant: NA 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
CAT5E PATCH CORD 30 FOOT BLACK 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
KJL 41C 41#20 PIN RECP 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| LRS1B12 |
64M ( X16) Flash & 64M ( X16) Flash & 32M ( X16) SCRAM & 8M (x16) SRAM
|
Sharp Microelectronics
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
