| PART |
Description |
Maker |
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| LRS1383F |
FLASH MEMORY 32M (X16) FLASH MEMORY 8M (X16) SRAM
|
Sharp Electrionic Components
|
| MB84VP23481FK-70PBS MB84VP23481FK-70 |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
SPANSION[SPANSION]
|
| MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
|
Fujitsu Media Devices Limited
|
| MB84VD22281EA-90 MB84VD22282EA-90 MB84VD22283EA-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| LH28F320BFHE-PTTL60 |
32M (x16) Flash Memory
|
Sharp Electrionic Components
|
| LH28F320BFE-PBTL60 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F320BFHE-PBTLZ2 |
32M (x16) Flash Memory
|
Sharp Corporation
|
| LH28F320BFHE-PBTL60 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
