| PART |
Description |
Maker |
| OP269 OP269SLB OP269SLC OP269SLA |
GAALAS PLASTIC INFRARED EMITTING DIODES
|
Optek Technology
OPTEK[OPTEK Technologies]
|
| OP290 OP292 OP291 |
GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极峰值前向电.0A)
|
Optek Technology
|
| SFH4591 SFH4592 Q62702-P5059 Q62702-P5060 SIEMENSA |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode，盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc.
ETC
OSRAM GmbH
|
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| MIE-304H4 304H4 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| CL-1CL3 |
Infrared Emitting Diodes(GaAlAs)
|
Kondenshi Corp
KODENSHI KOREA CORP.
|
| VTE1281-2 VTE1281-1 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
