| PART |
Description |
Maker |
| HEF4011B HEF4011BD HEF4011BDB HEF4011BF HEF4011BN |
SUMICON; HRS No: 216-0147-0 50; No. of Positions: 24; General Description: Top-touch lock type plug cover 集成电路000 LOCMOS
From old datasheet system
gates Quadruple 2-input NAND gate
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STS25NH3LL07 STS25NH3LL |
N-channel 30V - 0.0032Ω - 25 A - SO-8 STripFET III Power MOSFET for DC/DC conversion
N-channel 30 V - 0.0032 ヘ - 25 A - SO-8 STripFET⑩ III Power MOSFET for DC/DC conversion
N-channel 30 V - 0.0032 Ω - 25 A - SO-8 STripFET?/a> III Power MOSFET for DC/DC conversion
N-channel 30 V - 0.0032 Ω - 25 A - SO-8 STripFET III Power MOSFET for DC/DC conversion
|
STMicroelectronics
|
| STSJ100NH3LL_05 100H3LL- STSJ100NH3LL STSJ100NH3LL |
N-CHANNEL 30 V - 0.0032 ohm - 25 A PowerSO-8 STripFET III MOSFET FOR DC-DC CONVERSION
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP200NF03 |
N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET
|
STMicroelectronics
|
| HRMJ-H.FLP-3 |
HRS H.FL SERIES
|
Hirose Electric
|
| EF-1765-4 |
1,136,416 Hrs @ 30°C GB
|
JMK Inc.
|
| CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- |
8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| FF-1319A-13E |
2,278,890 Hrs @ 30C GB
|
JMK Inc.
|
| CC-0310-10 |
2,466,608 Hrs @ 30C GB
|
JMK Inc.
|
| EF-1366-4B |
978,232 Hrs @ 30C GB
|
JMK Inc.
|
| HM511000P-8S HM511000P-10 HM511000ALZP-10 HM511000 |
Compliant to MIL standard, Ribbon cable connectors; HRS No: 562-0560-2 00; Contact Mating Area Plating: Gold
Compliant to MIL standard, Ribbon cable connectors; HRS No: 562-0561-5 00; Contact Mating Area Plating: Gold
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
Sony, Corp.
DB Lectro, Inc.
|
| HM5116100S-5 |
16,777,216-word x 1-bit Dynamic RAM
|
Hitachi Semiconductor
|
