| PART |
Description |
Maker |
| ACT-SF512K32N-26P5C ACT-SF512K32N-26P5M ACT-SF512K |
ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module
|
Aeroflex Circuit Technology
|
| WED2DL32512V38BC WED2DL32512V40BI WED2DL32512V40BC |
512Kx32 Synchronous Pipeline Burst SRAM
|
WEDC[White Electronic Designs Corporation]
|
| WEDPS512K32V-XBX WEDPS512K32LV-17BM WEDPS512K32LV- |
512Kx32 SRAM 3.3V MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| WS512K32BV-XXXE |
512Kx32 3.3V SRAM MODULE
|
White Electronic Design...
|
| EDI7F433512V100BNC EDI7F433512V120BNC EDI7F433512V |
512Kx32 FLASH
|
White Electronic Designs Corporation
|
| WF512K32N-90G2LM5A WF512K32N-90H1I5A |
512Kx32 5V FLASH MODULE, SMD 5962-94612
|
White Electronic Design...
White Electronic Designs Corporation
|
| ACT-SF41632N-39F2C ACT-SF41632N-37F2Q ACT-SF41632N |
Serial-out shift registers 16-SO 0 to 70 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
XTAL MTL SMT HC49/USM 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
Serial-out shift registers 16-SOIC 0 to 70 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
RF CONNECTOR; 10-32 FEMALE, P.C. MOUNT
Serial-out shift registers 16-PDIP 0 to 70
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
|
| EDI8F32512C EDI8F32512C20MMC-G EDI8F32512C25MMC-G |
512Kx32 Static RAM CMOS, High Speed Module
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| AS8SLC512K32PEC-15_ET AS8SLC512K32PEC-15_IT AS8SLC |
16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| AS8S512K32PEC-25_ET AS8S512K32PEC-25_IT AS8S512K32 |
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V
5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28
SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
