PART |
Description |
Maker |
IS61QDP2B41M36A2 IS61QDP2B41M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
K7Q323682MK7Q321882M |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
|
Samsung Electronic
|
K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|