| PART |
Description |
Maker |
| CY14B116N-BZ25XIT CY14B116S-BZ25XI CY14B116S-BZ25X |
16-Mbit (2048 K 8/1024 K 16/512 K 32) nvSRAM
|
Cypress
|
| CY14B108M-ZSP25XI CY14B108M-ZSP45XIT CY14B108K-ZS4 |
8-Mbit (1024 K 8/512 K 16) nvSRAM with Real Time Clock
|
Cypress
|
| CY14B108K-ZS25XI CY14B108K-ZS25XIT CY14B108K-ZS45X |
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| IDT72511 IDT72511L25G IDT72511L25GB IDT72511L25J I |
PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024 x 18
|
IDT[Integrated Device Technology]
|
| IDT723631 IDT723631L15PF IDT723631L15PQF IDT723631 |
CMOS SyncFIFOO 512 x 36/ 1024 x 36/ 2048 x 36
CMOS SyncFIFOO 512 x 36, 1024 x 36, 2048 x 36
|
IDT[Integrated Device Technology]
|
| IDT72215 IDT72215LB IDT72215LB15G IDT72215LB15GB I |
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18
CMOS SyncFIFOO 256 x 18 512 x 18 1024 x 18 2048 x 18 and 4096 x 18
|
IDT[Integrated Device Technology]
|
| ZL50110GAG ZL50110GAG2 ZL50114GAG2 ZL50111GAG ZL50 |
128, 256, 512 and 1024 Channel CESoP Processors
|
Zarlink Semiconductor Inc
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
