| PART |
Description |
Maker |
| BCW71 BCW71-MR |
TRANSISTOR BCW71 MINIREEL 500PCS
NPN EPITAXIAL SILICON TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
|
| Z3F43Y101M330KM |
R/C NETWORK 100P 33R MINIREEL 200PCS C网铃100P 33R MINIREEL 200
|
TE Connectivity, Ltd.
|
| HW-300B |
Shipped in bulk (500pcs per pack).
|
List of Unclassifed Manufacturers
ETC
|
| HW302B |
High-sensitivity InSb Hall element. Thin SIP package. Shipped in bulk (500pcs per pack).
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| HZ-116C |
Shipped in packet-tape reel(2,500pcs per reel)
|
Asahi Kasei Microsystems
|
| T10A120T T10A130B T10A200T T10A240T T10A270B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 216V,max. Ir = 50uA @ Vr = 240V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 243V,max. Ir = 50uA @ Vr = 270V,max, Bulk (500pcs).
|
Littelfuse
|
| HFA135NH40 FA135NH40PBF |
400V 135A HEXFRED Discrete Diode in a D-67 Half-Pak package
DIODE 135 A, SILICON, RECTIFIER DIODE, Rectifier Diode
|
International Rectifier
Vishay Semiconductors
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| U40M 300U60AM |
DIODE 250 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
DIODE 300 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AC, Rectifier Diode
|
Vishay Semiconductors
|
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| HSMS-B2825 HSMS-B2825-TR2G HSMS-2820-BLKG HSMS-282 |
HSMS-282P · RF mixer/detector diode
HSMS-282K · RF mixer/detector diode
Surface Mount RF Schottky Barrier Diodes
HSMS-282F · RF mixer/detector diode
HSMS-2829 · RF mixer/detector diode
HSMS-282R · RF mixer/detector diode
HSMS-2825 · RF mixer/detector diode
HSMS-2823 · RF mixer/detector diode
HSMS-2822 · RF mixer/detector diode
HSMS-2824 · RF mixer/detector diode
HSMS-2820 · RF mixer/detector diode
HSMS-282L · RF mixer/detector diode
|
Agilent(Hewlett-Packard...
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
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