| PART |
Description |
Maker |
| PUMA68F4001I-15 PUMA68F4001MB-17 PUMA68F4001M-17 P |
x32 Flash EEPROM Module
1M (64K X 16), 3V, FLASH, VSOP, COM TEMP(FLASH) X32号，闪存EEPROM模块
|
Macronix International Co., Ltd.
|
| PUMA2F4001I-17 PUMA2F4001I-15 PUMA2F4001M-15 PUMA2 |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Air Cost Control
|
| WF2M32U-90G2I5 WF2M32U-90G2M5 WF2M32U-120G2I5 WF2M |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
TE Connectivity, Ltd.
|
| DPZ256S32IW-15C DPZ256S32IW-17C DPZ256S32IW-12C DP |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Vicor, Corp.
|
| PUMA67F16000I-25 PUMA67F16000M-15 PUMA67F16000M-20 |
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
250NS, PGA,883C; LEVEL B FULLY COMPLIANT(EEPROM)
200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
150NS, PDIP, IND TEMP(EEPROM)
150NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
NXP Semiconductors N.V.
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| AT49F008A AT49F008A-90TI AT49F8192AT-90TC AT49F819 |
x8/x16 Flash EEPROM
x8 Flash EEPROM
From old datasheet system
8M bit, 5-Volt Read and 5-Volt Byte-Write Flash
|
Atmel Corp
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
