| PART |
Description |
Maker |
| 813-SL66.6M-02A |
66.6MHz IF SAW Filter 2.88MHz Bandwidth
|
Oscilent Corporation
|
| RA30H0608M11 RA30H0608M-101 |
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA30H0608M_06 RA30H0608M RA30H0608M-101 RA30H0608M |
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
From old datasheet system
|
TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| APTGF90A60T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| PS21542-G |
IntellimodModule Dual-In-Line Intelligent Power Module (5 Amperes/600 Volts) AC MOTOR CONTROLLER, 10 A, XMA35
Intellimod??Module Dual-In-Line Intelligent Power Module (5 Amperes/600 Volts)
Intellimod⑩ Module Dual-In-Line Intelligent Power Module (5 Amperes/600 Volts)
Intellimod Module Dual-In-Line Intelligent Power Module (5 Amperes/600 Volts)
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| S-AU50M |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
TOSHIBA RF POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
