| PART |
Description |
Maker |
| CHA6005-99F CHA6005-99F00 |
8-12GHz High Power Amplifier
|
United Monolithic Semiconductors
|
| TGA2710 |
10.5 - 12GHz High Power Amplifier
|
TriQuint Semiconductor,Inc.
|
| HMMC-3024 |
HMMC-3024 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers
|
Agilent (Hewlett-Packard)
|
| TA060-120-35-33 |
6 ~ 12GHz 35dB Gain 33dBm Power Amplifier
|
Transcom, Inc.
|
| HMMC-3022 |
芯片0.5 - 12GHz高效率GaAs HBT的预分频
HMMC-3022 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers
|
Agilent (Hewlett-Packard)
|
| CHA2110-98F CHA2110-98F-15 |
7-12GHz LNA
|
United Monolithic Semic...
|
| CHA6105 CHA6105-99F00 |
8-12GHz Driver Amplifier
|
United Monolithic Semiconductors
|
| NBB-310-D NBB-310-PCBA-41X NBB-310-T1 NBB-31007 NB |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
|
http://
RFMD[RF Micro Devices]
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
|
USHA India LTD
|
| AWT6106 |
The AWT6106 is a 3.5V (3.0V to 4.2V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless ...
|
Anadigics Inc
|
