| PART |
Description |
Maker |
| IS43R16160A |
16Meg x 16 256-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| HYB18T256161BF-28 |
256-Mbit x16 DDR2 SDRAM
|
http://
|
| SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位（x16）的多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
|
| M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST
|
| M30L0R8000B0 M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX
STMICROELECTRONICS[STMicroelectronics]
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
